Abstract
The study represents the light and current parameters of an InGaAs/AlGaAs/GaAs double heterostructure, the layers of which were simultaneously subjected to doping and intermixing by rapid thermal annealing of zinc from a metal layer with a SiO2 coating at different temperatures and firing times: 1) 700 °C, 5 min; 2) 650 °C, 5 min; 3) 650 °C, 15 min. A comparison of samples with different temperatures and times of zinc annealing showed that an increase in the time and temperature of the process increases the shift of the luminescence maximum peak to the short-wavelength region. The best shift was 87 nm.
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