Effect of zero bias, 2.7 MeV proton irradiation on HfO2

Abstract

To provide radiation hard device is very critical and when a new technology come into existence it becomes more challenging. In this research paper we have explored the radiation response of hafnium dioxide (HfO2)/silicon (Si) structure based metal oxide semiconductor (MOS) capacitor on p-type substrate, subjected to 2.7 MeV proton irradiation at various fluencies (3.6 × 1012 protons/cm2, 7.2 × 1012 protons/cm2, 1.08 × 1013 protons/cm2, 1.8 × 1013 protons/cm2, 2.16 × 1013 protons/cm2 and 3.6 × 1013 protons/cm2). Through electrical characteristics, radiation hardness of atomic layer deposited HfO2 based MOS capacitor has been investigated. To directly measure interface charge and to evaluate its change with the ionizing doses, capacitance–voltage (C–V) and conductance–voltage (G–V) measurements are taken. To provide an evidence for the change in the device parameters pre and post-irradiation curves are plotted to compare the degradation of the device. Shift in C–V and G–V characteristics were observed in irradiated devices that also indicate a change in flat band voltage, midgap voltage and conductance of devices. Generation of new traps after proton irradiation was also confirmed by these measurements.