Abstract

HfO2 and Y2O3 doped HfO2 thin films were deposited using PLD on YSZ (001) substrate. The film composition and effect of Y2O3 on HfO2 thin films were investigated using the X-ray photoelectron spectroscopy (XPS) techniques. From the XPS analysis it was observed that due to Y2O3 doping the oxygen vacancy decreases in Y10 thin film as compare to Y0 thin film and further increases for Y20 thin film. A mixed phase formation of Hf-O-Y was observed in doped HfO2 thin film as Y2O3 doping increased from 10% in Y10 thin film to 20% in Y20 thin film.

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