Abstract

Second harmonic generation induced by surface plasma wave at the metal-semiconductor interface has been investigated. A thin layer of metals like Cu and Al have been considered in attenuated total reflection configuration(ATR) with a thin layer of semiconductor n-InSb over it. The study has been done in the presence of a wiggler magnetic field. The field provides additional momentum to the photons which help to attain phase matching conditions, leading to a resonant process of harmonic generation. Numerical analysis under given conditions show that Cu-InSb is the better choice for the harmonic generation as compared to Al-InSb.

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