Abstract
The impact of controlling the aspect ratio variation on glass substrate for a p-i-n a-Si:H solar cell was investigated and reported. Compared to a flat glass substrate (Corning Eagle XG), we demonstrate an increase of haze ratio from 1% to 79.1%, and an increment in the aspect ratio from 0.1 to 1.16, which is an increase to a high slope angle, using wet chemical etching. Optical transmittance measurements show a major improvement of from 92% to 96% for a wavelength of between 300 and 1100 nm, compared to the reference flat glass. A p-i-n a-Si:H solar cell was simulated using Advanced Semiconductor Analysis simulation based on these haze ratio and aspect ratio results, and yielded an increase in short-circuit current density (Jsc) from 15.38 to 18.74 mA/cm2, as the aspect ratio was increased from 0.1 to 0.84.
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