Abstract
We present the results of studies of the effect of wet chemical treatment on the properties of a GaAs surface modified by a gallium focused ion beam. Our studies based on results of AFM, KpAFM and Raman spectroscopy measurements have shown that, during wet chemical treatment, the damaged areas disappear completely in the case of low accelerating voltages and small doses of ions. At the same time, large accelerating voltages lead to the formation of extended damaged regions, the complete removal of which requires a longer treatment or additional processing.
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