Abstract
InGaAs/InGaAlAs asymmetric multiple quantum well structures containing three pairs of different well widths of 100 A, 70 A, and 40 A without changing the InGaAs well composition have been grown on InP substrates by molecular beam epitaxy. The samples show a broad bandwidth in the electroluminescence (EL) spectra with peak wavelengths at about 1.55 µm. Epitaxial samples of different arrangement of well widths and p-type modulation doping in the barriers have been grown and show a further increase of the 3 dBbandwidth to about 1750 A and a high flatness in EL spectra. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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