Abstract

AbstractIn this work, the electroless copper method with different reductant compositions (NaHSO3/Na2 S2O3·5H2O and Na2S2O3·5H2O) without sensitizing and activating, was used to deposit copper‐sulfide deposition on the polyacrylonitrile (PAN) surface for electromagnetic interference (EMI) shielding materials. The weak reductant, NaHSO3, in the electroless copper method was used to control the phase of copper‐sulfide deposition. The Cux(x=1–1.8)S was deposited on the PAN (CuxS‐PAN) by reductant composition (NaHSO3/Na2S2O3·5H2O) and the Cux(x=1–1.8)S deposition of CuxS‐PAN possesses three kinds of copper‐sulfide phases (CuS, Cu1.75S and Cu1.8S). However, the electroless copper with reductant was only Na2S2O3·5H2O (without weak reductant, NaHSO3), the hexagonal CuS deposition was plated on the PAN (CuS‐PAN) and increased the EMI shielding effectiveness of CuS‐PAN composites about 10–15 dB. In this study, the best EMI SE of CuS‐PAN and CuxS‐PAN composites were about 27–30 dB and 15–17 dB respectively, as the cupric ion concentration was 0.24 M. The volume resistivity of CuS‐PAN composite was about 1000 times lower than that of CuxS‐PAN composite and lowest volume resistivity of CuS‐PAN composites was 0.012 Ω cm, as the cupric ion concentration was 0.24 M. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2010

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