Abstract
On the basis of our recently proposed theory [Jpn. J. Appl. Phys. 49 (2010) 114101], we report the effect of wasted space on the multiplication gain and excess noise characteristics of GaN-based avalanche photodiodes. By means of the Monte Carlo method, it is shown that with the adoption of the revised impact ionization coefficients, the multiplication gain exhibits an obvious discrepancy compared with conventional theory, and agrees well with that reported for InP. Moreover, the size-dependent impact ionization coefficients affect the noise properties under submicron scale, leading to a new feature different from InP and clarifying the reported experimental data.
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