Abstract
In order to improve the stability and cost of perovskite CsPbBr 3 and establish a preparation process for quantum dot materials with excellent luminescence properties, CsPbBr 3 quantum dots were synthesized by the hot injection method and the ice bath method in air ambient. Then, a proprietary purification system was used to improve the properties of the quantum dots and prepare high-quality perovskite quantum dot films. Optimal material and light characteristics were exhibited with ethyl acetate:hexane as the purification solvent. In the solution form, the photoluminescence wavelength could be maintained at 508 nm with almost no shift compared with other conditions, and the quantum yield could reach 99%; however, superior performance was obtained in the thin-film form, which exhibited little to no shift in the photoluminescence wavelength and, surprisingly, achieved a quantum yield of 91.6% with a narrow PL emission with a full width at half-maximum of 28 nm. In addition, exceptional thin-film uniformity was observed from scanning electron microscopy image analyses. The CsPbBr 3 quantum dot light-emitting diode purified with ethyl acetate:hexane demonstrated an open-circuit voltage of 4 V, a maximum luminous brightness of 488 cd m -2 , and a maximum external quantum efficiency of 0.14%.
Highlights
Perovskite quantum dots (QDs), due to their advantages of low cost, narrow full width at half-maximum (FWHM), high photoluminescence (PL) quantum yield, tunable emission wavelengths, and easy surface modification, have attracted widespread attention [1]–[5]
The perovskite CsPbBr3 QD solutions were visually comparable under ambient light or UV light; the results are discussed in other measurement analyses
Following ACE and ACE:H purifications, because of the high polarity of ACE, the ligands of the QDs were damaged during the purification process, which led to agglomeration and resulted in a redshift in the wavelength to 509 nm and an increased FWHM to 33.5 nm
Summary
Perovskite quantum dots (QDs), due to their advantages of low cost, narrow full width at half-maximum (FWHM), high photoluminescence (PL) quantum yield, tunable emission wavelengths, and easy surface modification, have attracted widespread attention [1]–[5] These excellent properties have made QDs one of the most potentially useful light-emitting materials currently applied in light-emitting diodes (LEDs) [6]–[8], lasers [9], [10], photodetectors [11], [12], displays [13], [14], and visible light communication [15], [16]; they are very attractive in the optoelectronic field.
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