Abstract
Silicon Carbide is an excellent representative of the third-generation semiconductor materials, which can break the physical limit of silicon and achieve higher voltage of large power electronic devices. Such defects as dislocations and stacking faults in SiC epitaxial wafers have been shown to adversely affect SiC devices by introducing leakage paths and by reducing conductivity in the device drift region. This work discusses the effect of defects on the electrical properties and yields of SiC Schottky Barrier Diode. The diodes with voltage breakdown as 1200V were obtained and characterized. The phenomenon of the lowering of the Schottky barrier around the defect areas was analyzed.
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