Abstract
The electromigration resistance was studied for tapered and vertical via chains of 1.2 μm in diameter with conventional sputter deposited Al films. It was shown that the electromigration resistance of the tapered via chains with a slope angle of 55° is one order of magnitude lower than that of the vertical via chains with a slope angle of 85°. The electromigration resistance for the via chains decreases with decrease in the slope angle of the via hole. The activation energies of the electromigration resistance for the vertical and tapered via chains were 0.69 eV and 0.29 eV, respectively. The mean time-to-failure (MTF) for the tapered via chains with a single PSG passivation layer is at least two orders of magnitude greater than that with a dual SiN/PSG passivation layer. It was found that SiN passivation thickness is a significant factor affecting electromigration resistance for the via chain.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
