Abstract
In this work we investigate electric properties of CdS/CdTe solar cells subjected to Nitric-Phosphoric (NP) etching procedure, employed for the formation of Te-rich layer before back contacting. The etching time has been used as the only variable parameter in the study, while admittance spectroscopy (AS) [1] was employed for the characterisation of the cells' electric properties -as well as for the analysis of the defect energy levels and densities.
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