Abstract

Detailed knowledge of correlations between direct current (DC) cathodic arc deposition process parameters, plasma properties, and the microstructure of deposited coatings are essential for a comprehensive understanding of the DC cathodic arc deposition process. In this study we have probed the plasma, generated by DC arc on a Ti-50 at.% Al cathode in a N2 ambience, at the growth front of the TiAlN coating. Several consequences of an increasing N2 pressure are observed, including a decreased electron temperature, an increased electron density, and a loss of energetic ions. As a result, the preferred growth texture switches from 220 to 111. It is also observed that neutrals in the plasma can significantly contribute to the growth of TiAlN coatings.

Highlights

  • IntroductionSputtering processes have been extensively studied and a copious amount of literature on the correlations between plasma generation, the dynamics involved in the plasma transport and the subsequent microstructure developed in the thin films is readily available

  • Varying the N2 pressure during the direct current (DC) arc evaporation of Ti50 at.% Al cathode leads to changes in plasma properties close to the growth front of the coating

  • The changes in the plasma properties lead to the changes in the microstructure of the TiAlN coatings

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Summary

Introduction

Sputtering processes have been extensively studied and a copious amount of literature on the correlations between plasma generation, the dynamics involved in the plasma transport and the subsequent microstructure developed in the thin films is readily available. Engström et al [1] have shown how the magnetic field of an electromagnetic coil placed behind the substrate stage changes the plasma properties at the thin film growth front in magnetron sputtering (MS), which alters the microstructure of the thin film. 29 (2020) 095015 thin films, the plasma properties change depending on whether the Ti or Al cathode is placed in an HIPIMS source. This change in plasma properties alters the microstructure of the TiAlN thin films

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