Abstract
We have investigated the influence of HF, (NH4)2S and Hexa Methy Disilazane (HMDS) treatments on thermal stability of high-k/In0.53Ga0.47As interface and the chemical bonding states at high-k/In0.53Ga0.47As interface by the X-ray (hv= 1486.6eV) photoemission spectroscopy. The control of the oxide formation on In0.53Ga0.47As surface was tried by surface treatment. Analyses of As 3d, Ga 3p, In 3d, S 1s, Si 2p, N 1s, O 1s and C 1s spectra show that the oxidation of In0.53Ga0.47As was suppressed by various surface treatments.
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