Effect of vanadium substitution on structural and electrical properties of sol–gel grown nanostructured zinc oxide

Abstract

In the present communication, we report the results on the structural and electrical studies on nanostructured pure (ZnO) and Vanadium (V) doped Zn0.95V0.05O samples synthesized using low cost Sol-Gel technique. To understand the structural properties and their dependence on V substitution, X–Ray diffraction (XRD) measurement was carried out for both the samples understudy. XRD results reveal the single phasic wurtzite nature of both the samples showing hexagonal unit cell structure. A minor phase of ZnV2O6 is observed in V doped ZnO sample. Improved dielectric permittivity, enhanced ac conductivity (σac) and suppression in impedance have been discussed on the basis of structural modifications by the substitution of V in ZnO, enhanced charge carrier concentration, charge carrier polarization and correlated barrier hopping due to the localized state.