Abstract
Our experimental studies of electrical resistivity and magnetic susceptibility on Cr+2at.%Si and Cr+3at.%Fe doped with 0–2 at.% vanadium provide evidence that the depression in TN for the same change in impurity concentration is significantly different depending on whether a para-to-incommensurate (P-I) or para-to-commensurate (P-C) spin-density-wave structure is obtained at the onset of antiferromagnetic ordering. This we explain by assuming the observed empirical correspondence between the effect of pressure and the decrease of electron to atom ratio on TN. However, the reason for the two different rates of dTN/dP at the P-I (∼6 K/kbar) and P-C (∼30 K/kbar) type transitions in chromium alloys remain totally unexplained.
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