Abstract
AbstractA lower bound for the biexciton binding energy in wurtzite‐type semiconductors is calculated using a 64 × 64 matrix Hamiltonian obtained by the k · p method which takes into account the interband coupling‐induced nonparabolicity of the two upper valence bands A and B as well as their different anisotropies and symmetries. A properly symmetric variational ansatz for the ground state vector of the Γ1 biexciton (with AB and BB biexciton states admixed) yields an analytic expression for the binding energy. Its numerical evaluation for CdS as a function of the nonparabolicity parameters U and W shows a sensitive dependence on U, but only a weak dependence on W. It turns out that a strong valence band coupling (U = – 2h2/2m0 as proposed earlier) would result in a marked increase of biexciton binding energy due to the strong nonparabolicity of the A valence band in this case.
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