Abstract

Multilayer films (In2O3/SnO2)69 are obtained via ion-beam sputtering. The effect vacuum heat treatment in the range of room temperature to 600°C has on the structure and electrical properties is studied. It is found that the structures obtained with different thicknesses of the In2O3/SnO2 bilayer are stable up to a heat treatment temperature of 400°С. Raising the temperature to 600°C alters the sign of the coefficient of temperature resistance from negative to positive.

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