Abstract
AbstractThe effect of vacancies induced by the prior rapid thermal processing (RTP) at 900–1200 °C in Ar on copper (Cu) precipitation in n‐type silicon has been investigated by means of optical microscopy and transmission electron microscopy. It was revealed that in the sample without the prior RTP, the Cu precipitates appeared as spheres with sizes of about 100 nm and, moreover, induced stress in the matrix. In this case, they were preferentially delineated as etch pits. Whereas, for the samples with the prior RTP at 1000 °C and above, the Cu‐precipitate colonies, in which a number of sphere‐like Cu precipitates with sizes of 10–20 nm assembled on and around the climbing dislocations, formed with different depth profiles dependent on the prior RTP temperature. The formation of Cu‐precipitate colonies and their depth profile were tentatively explained in terms of the induced vacancies and their related defects. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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