Abstract
In this paper, the superlattice-like V2O5/Ge8Sb92 films are studied. Compared with Ge8Sb92 film, V2O5/Ge8Sb92 films have a high crystallization temperature (~233 °C), a large amorphous resistance (~3.4 × 107 Ω) and good data retention temperature (~171.2 °C) for ten years. The volume change rate of V2O5/Ge8Sb92 superlattice-like film is only 1.855% during the crystallization, which can guarantee a better contact with the electrode when it is applied in the phase-change memory. By adding of V2O5 interlayers, the thermal stability and reliability of Ge8Sb92 film have been greatly improved.
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