Abstract
Strontium bismuth tantalate vanadate [SrBi2(Ta2−xVx)O9, SBTV] ceramics, which are bismuth-layered perovskite ferroelectrics, were synthesized through the solid-state reaction method. The effects of different sintering temperatures and V2O5 contents on the structure of the microstructure, Raman spectrum, and dielectric properties of the SBTV ceramics were investigated. As sintered at high temperature (980–1040 °C) and different V2O5 contents (x = 0.1 − x = 0.4), only disk-like grains of the SBTV ceramics were observed in the scanning electron micrographs. Preferential orientation of the crystals of the SBTV ceramics was confirmed through X-ray diffraction studies. The higher dielectric constant and Curie temperature of the SBTV ceramics compared with those of strontium bismuth tantalite (SrBi2Ta2O9, SBT) ceramics are ascribe to the partial replace of Ta5+ ions by V5+ ions in the B sites. The Curie–Weiss law and the modified Curie–Weiss law were used to discuss the normal-type or relaxor-type ferroelectric characteristic of the SBTV ceramics. The Ta5+ ion replaced by V5+ ion site in SBT ceramics to form SBTV ceramics exerted a pronounced effect on the BO6 mode, as demonstrated by Raman spectrum results.
Highlights
Strontium bismuth tantalate vanadate [SrBi2(Ta2−xVx)O9, SBTV] ceramics, which are bismuth-layered perovskite ferroelectrics, were synthesized through the solid-state reaction method
Huanga et al indicated that the diffraction intensities corresponding to (00l) preferred orientations (i.e.) (006), (008), (0010), (0012), and (0014) of the SBTV1 were stronger than those of undoped SBN c eramics16. V2O5 has a low melting point of 690 °C; the results indicate that V 2O5 has a liquid-phase effect during sintering to promote the crystal growth of the (00l) preferential orientation of the SBTV1 ceramics[17]
The Ta2O5 replaced by the V 2O5 in SrBi2(Ta2−xVx) O9 (SBTV) ceramics, the sintering temperature was reduced, the densification was enhanced, and the dielectric constant of S rBi2(Ta2−xVx)O9 ceramics was improved
Summary
Strontium bismuth tantalate vanadate [SrBi2(Ta2−xVx)O9, SBTV] ceramics, which are bismuth-layered perovskite ferroelectrics, were synthesized through the solid-state reaction method. As sintering temperature was increased from 920 to 1040 °C, the full width at half maximum (FWHM) for the peak of the (115) plane of the SBTV1 ceramics decreased from 0.182 to 0.135 (Fig. 2).
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