Abstract
To obtain high strength and high electrical conductivity at the same time, the microstructure and properties of 0.2 wt.% V-added, 0.1 wt.% V-added and V-free Cu-1.6Ni-1.2Co-0.65Si(-V) alloys were investigated. We examined with electrical conductivity and hardness measurements, tensile test, optical microscope and transmission electron microscope (TEM). The results show that Cu-1.6Ni-1.2Co-0.65Si-0.1V alloy obtains excellent combination properties: electrical conductivity is 46.12% IACS, hardness is 293.88 Hv, and tensile strength is 782 MPa, which are produced by 65% cold rolling + aging at 500 °C for 480 min. The addition of vanadium (V) can accelerate the precipitation of solute atoms from the copper matrix, improve the hardness and electrical conductivity of Cu-1.6Ni-1.2Co-0.65Si alloys, and greatly accelerated the aging response. δ-(Co,Ni)2Si and β-Ni3Si phases are detected in Cu-1.6Ni-1.2Co-0.65Si-0.1V alloy. The Orowan mechanism and grain boundary strengthening play a major role in the yield strength strengthening due to δ-(Co,Ni)2Si phase.
Highlights
With the rapid development of the electronics industry, copper alloys are widely used for contact wires and lead frames due to their good electrical conductivity, good mechanical properties and low cost [1,2,3,4,5,6,7], such as Cu-Cr [8], Cu-Ni-Sn [9], Cu-Ni-Si [10] and Cu-Ti [11] alloys
Many studies have tested the addition of other elements in Cu-Ni-Si alloys in order to provide new materials for the electronic industry with both high strength and high electrical conductivity, such as Al, Ti, P, Mg, Cr, Zr, etc., indicating a significant improvement in alloy properties [3,14,15,16,17,18]
Figure shows contributor of diffraction spots. These were consistent with the results reported in reference the Transmission electron microscopy (TEM) images of disk-like precipitates in the Cu-1.6Ni-1.2Co-0.65Si-0.1V alloy aged at 500 C for Figure shows thatfor the240
Summary
With the rapid development of the electronics industry, copper alloys are widely used for contact wires and lead frames due to their good electrical conductivity, good mechanical properties and low cost [1,2,3,4,5,6,7], such as Cu-Cr [8], Cu-Ni-Sn [9], Cu-Ni-Si [10] and Cu-Ti [11] alloys. Many studies have tested the addition of other elements in Cu-Ni-Si alloys in order to provide new materials for the electronic industry with both high strength and high electrical conductivity, such as Al, Ti, P, Mg, Cr, Zr, etc., indicating a significant improvement in alloy properties [3,14,15,16,17,18].
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