Abstract
The effects of the underlayer on the via filling and the microstructure of the chemical vapor deposition (CVD)-physical vapor deposition (PVD) Al films were investigated. Three types of underlayers were examined in this work: the Ti film deposited by the ionized PVD (I-PVD) method, the metalorganic CVD (MOCVD) TiN film stacked on the I-PVD Ti film, and the PVD Al film deposited on the I-PVD Ti film. Excellent via filling was achieved by employing the MOCVD TiN/I-PVD Ti or the PVD Al/I-PVD Ti as an underlayer. When only I-PVD Ti film was used as an underlayer, complete via filling was not obtained, because the CVD Al film sealed the top of vias. The CVD-PVD Al film deposited on the PVD Al/I-PVD Ti underlayer also showed excellent crystallographic texture of Al <111> and surface morphology, which is superior to those of the CVD-PVD Al film deposited on the MOCVD TiN/I-PVD Ti underlayer.
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