Abstract
Summary form only given. Magnetic tunnel junction (MTJ) composed of ferromagnetic (FM1)/insulator (I)/ ferromagnetic (FM2) layer have investigated for years because it is believed to realize new and high performance magnetic sensor and memory devices. Flat interfaces were required to get best performance without orange peel coupling between FM1 and FM2. This article shows the cross-sectional TEM image of MTJ multilayer. The large curvature of insulator layer is shown at the grain boundary region of FM1. For this purpose, we tried to decrease grain boundary density /spl zeta/ per unit area by increasing grain size of FM1. Then switching field of Mumetal, Hsw1 and exchange coupling field, Hex were measured to see the change of interlayer coupling state.
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