Abstract
In this paper, the effect of ultraviolet (UV) irradiation on the static characteristics of high voltage 4H-SiC PiN is investigated. No significant change is observed in the forward on state characteristic of 4H-SiC PiN diodes before and after ultraviolet light irradiation. However, it is found that the blocking voltage is significantly increased with UV irradiation, which is resulted from the depletion region width extension with the collection of positive charges under the increase of the surface negative charge density. The deep level transient spectroscopy reveals that the UV irradiation induced deep-level defects play a dominant role over the trapped negative charges, and therefore leads to the increase of blocking voltage of 4H-SiC PiN Diodes.
Highlights
Silicon Carbide (SiC) is expected to be a promising candidate material for the next-generation high-power and high-temperature electronic devices, due to its wide bandgap, high critical electric field strength, high electron saturation velocity and superior thermal conductivity [1–4]
We investigated the effect of UV irradiation on 4H-SiC PiN diodes the forward and reverse blocking characteristics using 184.9 nm wavelength UV irradiation
The effect of UV irradiation on static characteristics of SiC PiN is shown in Figs. 2 and 3 where the characteristics measured before and after irradiation are compared for device 1 (D1) and device 2 (D2)
Summary
Silicon Carbide (SiC) is expected to be a promising candidate material for the next-generation high-power and high-temperature electronic devices, due to its wide bandgap, high critical electric field strength, high electron saturation velocity and superior thermal conductivity [1–4]. SiC devices are being developed to replace many of the devices currently used in silicon, especially in the requirements which need to operate at high voltages and current levels, and at temperatures above 200 °C. SiC bipolar devices are attracting considerable interests owing to ultra-high voltage applications because of the conductivity modulation effect in recent years. As a typical bipolar device, high voltage 4H-SiC PiN diode has been demonstrated, which is a potential choice for high voltage rectifier applications, including advanced smart grid, energy storage and pulsed power [5–8].
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