Abstract

Monocrystalline silicon is difficult to achieve high material removal rate (MRR) and good surface quality for conventional mechanical polishing (MP). Therefore, ultrasonic vibration assisted polishing (UVP), combined with the functions of conventional mechanical polishing and ultrasonic vibration machining, is employed to polish single crystal silicon in our research. The results show that ultrasonic vibration can effectively increase the MRR and quickly obtain a better surface quality. The effects of ultrasonic vibration on the surface quality and the MRR of single abrasive were analyzed by molecular dynamics simulation (MDS) in the atomic point of view. A material removal model of single abrasive is set up to verify the results of molecular dynamic simulation. Experiments are conducted for model verification, which results show that the MRR model can predict the effect of the amplitude on the material removal rate well.

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