Abstract
The effect of ultrasonic treatment on the mobility of short surface dislocations in Si crystals is investigated. It is found that ultrasonic treatment of Si crystals changes the velocity of dislocations under a permanent mechanical load. The nature of variation of dislocation velocity is determined by the sign of external stresses acting on the sample: compressive forces decrease while tensile forces increase the velocity of dislocations. After ultrasonic treatment of the samples, a decrease in the activation energy for dislocation motion and the enhancement of the electroplastic effect are observed. A possible mechanism of the observed effects is considered.
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