Abstract
AbstractThe effect of ultrasonic treatment (UST) on the defect structure of the Si‐SiO2 system by means of electron spin resonance (ESR), metallography, MOS capacitance technique and secondary ions mass‐spectroscopy (SIMS) is presented. The non‐monotonous dependence of the defect densities on the US wave intensity has been observed. The influence of the UST frequency on the ESR signal intensity of the defect centres depended on the defects type and structure and may becaused by vibrational energy dissipation which are a functions of defect's centers type. The influence of the UST on the Si‐SiO2 interface properties depends on the oxide thickness and crystallographic orientation. The density of point defects and absorbed impurities at the Si–SiO2 interface can be reduced and its electrical parameters improved by an appropriate choice of the UST and oxidation conditions. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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