Abstract

ABSTRACTComparative studies on the effect of Ultra-dilute RCA cleans, chemical ratios in excess of 300:1, and Dilute RCA cleans, chemical ratios around 50:1, on the integrity of thin gate oxides have been performed. Ultra-dilute RCA chemistries have shown particle removal efficiency, metallic contamination removal, surface roughness, Qbd, BVox and defect density equivalent to those obtained using dilute RCA chemistries. Furthermore ultra-dilute chemistries use less chemical leading to shorter rinse times and thus increased throughput as compared to the dilute RCA chemistries.

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