Abstract

Based on first-principles phonon calculations within the framework of quasiharmonic approximation, we study the effect of twin grain boundary (TGB) on the thermal expansion of insulating materials. We select diamond-structure solids (C, Si, and Ge) and rutile $({\mathrm{SnO}}_{2})$ as representatives of the covalent and ionic bonding materials that are important systems commonly accompanied with TGB. We found distinct effects of TGB on thermal expansion in two types of materials. For diamond-structure solids, the thermal expansion of (111)-oriented twinning structure varies subtly from that of pristine material within the temperature range studied, which is primarily induced by the modification of vibrational phonon mode by the TGB effect. Distinctly, the thermal expansion of $\mathrm{SnO}_{2}$ twinnings increase substantially by comparison with the pristine case and depend strongly on the twin orientation. The (101) twinning shows much larger thermal expansion than the (301) twinning. Further analysis indicates the physical mechanism can be mainly attributed to the effect of rotational degree of freedom of the $\mathrm{SnO}_{6}$ octahedron motif and the stress induced by TGB. Our work reveals the physical mechanism underlying the distinct effect of TGB on thermal expansion caused by different chemical bonding, and meanwhile provides an insightful understanding of the relationship between specific structural features and thermal expansion in solid-phase materials.

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