Abstract
The amount of interface state density and charge present in the oxide layer of several silicon MIS tunnel structures grown in presence of (i) dry oxygen, (ii) dry oxygen and trichloroethylene (TCE), and (iii) wet oxygen and TCE have been determined. It has been observed that both the oxide charge density and the interface state density are lowest in case (iii) and highest in case (i). Measurement of barrier height for different cases supports the observed decrease of charge in the oxide layer.
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