Abstract
An approach for enhancing the characteristics of resistive switching in the crystalline Hafnium oxide-based CBRAM (Conductive Bridging Resistive Switching Memory) device is reported in this article. The crystalline Hafnium oxide resistive switching layer and the TiW blocking layer are beneficial for controlling filament growth. Improved resistive parameters, including stability and resistance distribution, were successfully demonstrated in Cu/TiW/annealed-HfO2/Pt devices compared to Cu/HfO2/Pt-based devices. Moreover, the proposed bipolar device demonstrates improved memory performance, such as good retention characteristics (>104 s) and a high ON/OFF resistance ratio.
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