Abstract
Primarily, mc-Silicon growth is undertaken by directional solidification (DS) process. Reduction of non-metallic impurities such as oxygen, carbon and nitrogen in DS produced mc-Si ingots is a challenging task and strong contaminations come from inner parts of the DS system. In conventional DS system heat exchanger block and retort are made of graphite. In our present work, we have used a heat exchanger block and retort made by titanium carbide (TiC). The simulation has been done for using both graphite and TiC as Heat exchanger block and retort. The simulation results were compared and analysed. The numerical simulation of oxygen impurity distributions in melt and crystal has been investigated. When we used TiC as Heat exchanger block and retort, it gives lower melt convection in the molten stage, more uniform temperature distribution in x- axis and lower temperature gradient in y-axis at the end of solidification. The lower melt convection can reduce the oxygen impurities and results in uniform oxygen distribution. So, TiC based DS system gives better results compared with the graphite-based system.
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