Effect of Ti on microstructural and optoelectrical characteristics of Ti-CdO NPs prepared with microwave irradiation techniques for application of the n-TiCdO/p-Si photodetector

Abstract

The microwave irradiation technique has been used to synthesize the highly uninformed and well dispersed pure and Ti-doped CdO NPs. The influence of Ti-doping on microstructural, surface morphology, and optoelectrical characteristics of the prepared samples were inspected by XRD, SEM, TEM, EDS, XPS, and DC electrical conductivity. X-ray diffraction result exposes that the synthesized nanoparticles are crystalline with a cubic phase having preferred orientation along (111) plane. Ti doping affects the crystallinity and microstructural properties such as crystallite size (D), lattice constant (a), microstrain (ε), dislocation density (δ), and stacking fault (SF). SEM and TEM micrographs depicted that the nanoparticles' surface morphology changed from nail-like shape to sphere-like shape with a decrease in grain size due to Ti doping. EDS and XPS studies reveal the synthesis of CdO and Ti-CdO nanoparticles without impurities. The I-V graph shows high conductivity at higher doping levels. The fabricated n-TiCdO/p-Si diode parameters have been examined at dark and light illumination conditions. The diode feature, like the ideality factor (n) and barrier height (Фb), is calculated by the J-V method.