Abstract
Three-dimensional (3D) through-silicon-via (TSV) technology is emerging as a powerful technology to reduce package footprint, decrease interconnection power, higher frequencies, and provide efficient integration of heterogeneous devices. TSVs provide high speed signal propagation due to reduced interconnect lengths as compared to wire-bonding. The current flowing through the TSVs results in localized heat generation (joule heating), which could be detrimental to the device performance. The effect of joule heating on performance measured by transconductance, electron mobility (e− mobility), and channel thermal noise is presented. Results indicate that joule heating has a significant effect on the junction temperature and subsequently results in 10–15% performance hit.
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