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Abstract
Aluminum/chemical vapor deposited tungsten (Al/CVD‐W) interconnects shows an undesirable large increase in sheet resistance due to Al‐W reaction during annealing at 450°C. The effect of native oxides on W surfaces on the resistance increase has been studied. When there is no native oxides on W surfaces, the narrower interconnects show a larger increase in sheet resistance after annealing due to the nonuniform formation of . On the other hand, the interconnects with the native oxide at the Al/W interface show a large increase in sheet resistance, which has little dependence on linewidth. This is because formation is suppressed by and formation.
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