Effect of thin HgTe layers on dislocations in HgCdTe layers on Si substrates

Abstract

We have found the effects of HgTe layers on dislocations of (111)B HgCdTe layers grown on Si substrates by metalorganic vapor phase epitaxy. The dislocations in HgCdTe layers were reduced by inserting thin HgTe layers between HgCdTe and CdTe buffer layers. Using this method, the dislocation density of 2.3×106 cm−2 was obtained, which is less than quarter that of HgCdTe layers without HgTe.