Abstract
A prospective improvement of InGaAs-based quantum well heterostructures design is possible towards the quantum treatment of electron subbands states and electron transport processes in the real structures with thin spatially inhomogeneous functional nanolayers. Insertion of nanosized GaAs, AlAs and InAs layers into quantum well/spacer/barrier layers or applying a graded InyGa1-yAs channel can enhance electron transport properties and gives a novel degree of freedom for the quantum structures engineering. The review and original study for PHEMT/GaAs, HFET/GaAs and InP HEMT structures are discussed.
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