Abstract

Atomic-scale modeling of self-positioning GaAs–InAs nanostructures is performed. Curvature radius values obtained by the atomic-scale finite element method are compared with those obtained by a continuum mechanics solution under plane strain conditions. Atomic-scale modeling and continuum mechanics solution predict the same curvature radius for structures with large thickness. However, atomic-scale modeling shows significant decrease of the curvature radius for structures with thickness less than 40nm.

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