Effect of thickness and temperature on electrical properties of single junction thin film silicon solar cell

Abstract

In this paper, a single junction thin film based solar cells with different material as an intrinsic layer (a-Si, c-Si, μ-Si and n-Si) was designed in AMPS-1D simulator for comparison of the solar parameters, which dictates the materials required for obtaining the best solar cells performance. The thickness of the intrinsic layer was varied from 300 nm to 3000 nm and the changes in electrical parameters with thickness are shown. The effect of temperature on efficiency of the thin film solar cells are reported here. The material properties values that have been used here is similar to those obtained experimentally. The electrical properties that have been observed at 300 nm thickness in different intrinsic silicon layer are similar to those obtained experimentally. Efficiency obtained at 300 k temperature is also similar to experimentally obtained results.