Abstract
The flatband voltage of metal-insulator-semiconductor (MIS) structures with thermally nitrided SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (nitroxide) insulators has been studied as a function of the nitroxide thickness in the range of 10-60 nm, for different nitridation conditions. The most striking result is that 10-nm nitroxide films are far less susceptible than thicker ones to the degradation of the electrical properties of the starting SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> films induced by nitridation, as revealed by a negative shift of the flatband voltage. For nitridation cycles at relatively low temperatures (900° 120 min or 1000°C 60 min) the shift in the 10-nm films is practically negligible.
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