Abstract

The effect thermal treatment in a vacuum has on the thermoelectric properties of Sb0.9Bi1.1Te2.9Se0.1 solid solution thin films obtained via ion-beam sputtering in an argon atmosphere is considered. It is established that the specific resistance and thermopower are determined by the type and concentration of intrinsic point defects of the Sb0.9Bi1.1Te2.9Se0.1 solid solution. The power factor values are found to be comparable to those of nanostructured materials based on (Bi,Sb)2(Te,Se)3 solid solutions.

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