Abstract
We have prepared undoped-Bi4Ti3O12 (BIT) thin films on (111) Pt/Ti/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD) using Bi(CH3)3 and Ti(i-OC3H7)4 sources. The structural properties of the BIT thin films deposited at 500°C depend on the total gas flow rate of Ar and O2 gases during the deposition. The electrical and structural properties of the as-deposited BIT thin films are improved by postannealing at 800°C in O2 atmosphere. When the total gas flow rate was 90 sccm, the post-annealed BIT thin films exhibited a (117)-preferred orientation and a good P–E histeresis loop. Their remanent polarization (Pr) and the coercive field (Ec) were 2Pr=28.8 µC/cm2 and 2Ec=130.7 kV/cm, respectively.
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