Abstract
The influence of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes with near-surface polarization-induced delta-doping has been studied. It is shown that annealing provides additional possibilities for controlling the effective barrier height of diodes, improving and fine-tuning their transport characteristics. Thermal annealing can be used to fabricate low-barrier diodes designed to operate at high temperatures. Keywords: low-barrier diode, GaN, transport properties, thermal annealing.
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