Abstract
In the present work, Ag/In/Ag/In multilayers were deposited on glass substrates by DC magnetron sputtering and the films were selenized at 350℃. The selenized films were annealed at 450℃ and 500℃. The selenized and annealed films were characterized by X-ray diffraction (XRD), UV-Visible-NIR spectroscopy and Field Emission Scanning Electron Microscopy (FESEM). XRD revealed formation of the desired AgInSe2 phase along with Ag2Se as impurity phase. Unlike in previous studies, where conventional approach of optimizing the volume fraction of initial precursor material is adopted to control the phase purity of AgInSe2, we show that annealing highly impure films at 500℃ can suppress the impurity phase and lead to pure AgInSe2 phase. The suppression of the low band gap Ag2Se impurity phase on annealing the films at 500℃ led to increase in the optical band gap. Copyright © 2016 VBRI Press
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