Abstract
A crack-free CdGeAs2 single crystal 15mm in diameter and 50mm in length was grown in a three-zone tubular furnace by the modified vertical Bridgman method. During the annealing processes, the effects of treatments with different atmosphere, different temperatures and time were investigated. The as-grown and annealed wafers were characterized using X-ray diffractometer (XRD), energy dispersive spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR) and IR microscope. Conclusively, the results confirm annealing could improve the optical qualities of as-grown CdGeAs2 crystal. The best result was obtained under cover-up with CdGeAs2 polycrystalline powder at 450°C for 150h and the IR transmittance of the wafer measured by FTIR was up to 48.65% nearby 5.5μm and exceeded 50% in the range of 8–12μm. Additionally, the monolithic homogeneity of the crystal has also been greatly improved after annealing under cover-up with polycrystalline powder.
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