Abstract
The effects of thermal annealing on optically transparent electrodes of ITO (indium tin oxide) contact deposited on p-type Be-doped GaAs have been investigated by means of the transfer length method and secondary ion mass spectroscopy measurements. This study shows that the temperature that minimizes the specific contact resistance of ITO/GaAs (500 °C) greatly differs from the temperature that leads to a maximum conductivity of the ITO layer (600 °C) and from the values reported on ITO/GaAs in the literature. The oxygen diffusion in the semiconductor layer and its interaction with the beryllium dopant is pointed out to explain these differences.
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