Abstract
The effect of thermal annealing on the optical and electrical properties of amorphous silicon (a-Si) was studied on the samples prepared by radio-frequency sputtering. Hydrogen evolution is likely responsible for the change in optical absorption, while oxygen incorporation during sputtering is probably responsible for the change in electrical conductivity after thermal annealing. Our data indicate the possibility of the variable range hopping in unhydrogenated a-Si films.
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