Abstract
We deposited Ni (15 nm)/Au (30 nm) layers on a-InGaZnO in order to produce low-resistance ohmic contacts by using a dc sputtering method. The samples were annealed at various temperatures for 5 min in Ar ambient. The electrical and the structural properties of the Ni/Au contact to a-InGaZnO were investigated. According to the current–voltage measurements, both the as-deposited and low-temperature annealed samples showed an ohmic behavior. The specific contact resistance of the as-deposited sample was 4.1 × 10 − 5 Ω cm 2, which was the lowest value. Further increasing the temperature above 400 °C led to an increase in the specific contact resistance. This is due to the chemical intermixing and formation of the oxide in the contact interface caused by the post-growth thermal annealing.
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